Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire

The hetero-epitaxy of (11¯22) GaN on (10¯10) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low-temperature AlN interlayers (ILs) as well as a SiN_x IL. X-ray diffraction (XRD) of ω scans of the symmetric (11¯22) reflection yielded an ω FWHM <450′′ along [11¯2¯3] and <900′′ along [10¯10] together with a 100 × 100 μm^2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈10^9 cm^−2 while the basal plane stacking fault density was in the lower 10^5 cm^−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10¯1¯3) phase was lower than 1 in 10,000 as judged from XRD.This work was supported by EU-FP7 ALIGHT No. NMP-2011-280587 and the UK Engineering and Physical Sciences Research Council No. EP/I012591/1 and EP/J003603/1.This is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/pssb.20155226

Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction

Porous GaN distributed Bragg reflectors (DBRs) provide strain-free, high-reflectivity structures with a wide range of applications across nitride optoelectronics. Structural characterization of porous DBRs is currently predominantly achieved by cross-sectional scanning electron microscopy (SEM), which is a destructive process that produces local data and has accuracy limited to around 3% by instrument calibration uncertainty. Here, we show that high-resolution x-ray diffraction (XRD) offers an alternative, nondestructive method for characterizing porous nitride structures. XRD scans of porous GaN DBRs show that despite the constant lattice parameter across the DBR layers, characteristic satellite peaks still arise, which are due to the interference between x-rays reflected from the porous and nonporous layers. By comparing the intensities and positions of the satellite peaks through diffraction patterns simulated from a kinematic model, the structural properties of the porous GaN DBRs can be analyzed. Using our method, we have measured a series of DBRs with stop bands from the blue wavelength region to the IR and compared their structural values with those from SEM data. Our results show that the XRD method offers improvements in the accuracy of determining layer thickness, although uncertainty for the value of porosity remains high. To verify the results gained from the XRD and SEM analysis, we modeled the optical reflectivity using the structural values of both methods. We found that the XRD method offered a better fit to the optical data. XRD, therefore, offers accurate, nondestructive characterization of porous DBR structures based on macroscale measurements and is suitable for full wafer analysis.</jats:p

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

The influence of growth temperature and V/III-ratio on the surface morphology of (001) cubic zincblende GaN epilayers during metal organic vapour phase epitaxy growth has been investigated using atomic force microscopy and transmission electron microscopy. The zincblende phase purity as determined by X-ray diffraction was found to be above 98% for most GaN epilayers studied. As the growth temperature was increased from 850 °C to 910 °C and as the V/III-ratio was separately increased from 38 to 300, surface features were found to be elongated in the [1-10] direction, and the ratio of the length to width of such surface features was found to increase. Faceting was observed at V/III-ratios below 38 and above 300, which in the latter case was accompanied by a reduction of the zincblende phase purity. An explanation for these morphological trends is proposed based on effects such as the reduced symmetry of the top monolayer of the (001)-oriented zincblende GaN lattice, diffusion of Ga and N adatoms on such a surface, and the relative energies of the crystal facets.We would like to thank Innovate UK for the financial support within the Energy Catalyst Round 2 - Early Stage Feasibility scheme (Ref. 132135) and Energy Catalyst Round 4 - Mid Stage Feasibility scheme (Ref. 102766). We acknowledge the support of EPSRC through grant no. EP/M010589/1 and grant no. EP/R01146X/1. DJW would like to thank the support of EPSRC through grant no. EP/N01202X/1

Systematic X-ray absorption study of hole doping in BSCCO - phases

X-ray absorption spectroscopy (XAS) on the O 1s threshold was applied to Bi-based, single crystalline high temperature superconductors (HTc's), whose hole densities in the CuO2 planes was varied by different methods. XAS gives the intensity of the so-called pre-peak of the O 1s line due to the unoccupied part of the Zhang-Rice (ZR) singlet state. The effects of variation of the number n of CuO2 - planes per unit cell (n = 1,2,3) and the effect of La-substitution for Sr for the n = 1 and n = 2 phase were studied systematically. Furthermore the symmetry of the states could be probed by the polarization of the impinging radiation.Comment: 4 pages, 2 figures, to appear in the proceedings of SCES2001, Ann Arbor, August 6-10, 200

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

In this paper we investigate the effect of including an electron blocking layer between the quantum well active region and the p-type layers of a light emitting diode has on the conduction and valence band profile of a light emitting diode. Two light emitting diode structures with nominally identical quantum well active regions one containing an electron blocking layer and one without were grown for the purposes of this investigation. The conduction and valence band profiles for both structures were then calculated using a commercially available Schrödinger-Poisson calculator, and a modification to the electric field across the QWs observed. The results of these calculations were then compared to photoluminescence and photoluminescence time decay measurements. The modification in electric field across the quantum wells of the structures resulted in slower radiative recombination in the sample containing an electron blocking layers. The sample containing an electron blocking layer was also found to exhibit a lower internal quantum efficiency, which we attribute to the observed slower radiative recombination lifetime making radiative recombination less competitive.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.This is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/pssc.20151018

A Canted Double Undulator System with a Wide Energy Range for EMIL

At BESSY II a canted double undulator system for the Energy Materials In situ Laboratory EMIL is under construction. The energy regime is covered with two undulators, an APPLE II undulator for the soft and a cryogenic permanent magnet undulator CPMU 17 for the hard photons. The layout and the performance of the undulators are presented in detail. The minimum of the vertical betatron function is shifted to the center of the CPMU 17. The neighboring quadrupoles and an additional quadrupole between the undulators control the vertical betatron function. Prior to the undulator installation a testing chamber with four movable vertical scrapers has been implemented at the CPMU 17 location. Utilizing the scrapers the new asymmetric lattice optics will be tested and optimize

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

We present low temperature photoluminescence spectra from four InGaN/GaN single quantum well structures where the total electric field across the quantum wells was varied by the manipulation of the surface polarization field, which is of opposite sign to the electrostatic built-in field originating from spontaneous and piezoelectric polarization intrinsic to the material. We find that, overall, the photoluminescence peak emission energy increases and its full width at half maximum decreases with decreasing total internal electric field. Using an atomistic tight-binding model of a quantum well with different total internal electric fields, we find that the calculated mean and standard deviation ground state transition energies follow the same trends with field as our experimentally determined spectral peak energies and widths. Overall, we attribute this behavior to a reduction in the quantum confined Stark effect and a connected reduction in the variation of ground state transition energies with decreasing electric field, respectively

Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn<inf>3</inf>X films

Two thin film deposition routes were studied for the growth of high quality single crystalline Ru (0001) epitaxial films on c-Al2O3 substrates using RF-magnetron sputtering. Such films are very important as buffer layers for the deposition of epitaxial non-collinear antiferromagnetic Mn3X films. The first route involved depositing Ru at 700 °C, leading to a smooth 30 nm thick film. Although, high resolution X-ray diffraction (HRXRD) revealed twinned Ru film orientations, the in-situ post-annealing eliminated one orientation, leaving the film orientation aligned with the substrate, with no in-plane lattice rotation and a large lattice mismatch (13.6%). The second route involved deposition of Ru at room temperature followed by in-situ post-annealing at 700 °C. Transmission electron microscopy confirmed a very high quality of these films, free of crystal twinning, and a 30° in-plane lattice rotation relative to the substrate, resulting in a small in-plane lattice mismatch of –1.6%. X-ray reflectivity demonstrated smooth surfaces for films down to 7 nm thickness. 30 nm thick high quality single-crystalline Mn3Ga and Mn3Sn films were grown on top of the Ru buffer deposited using the second route as a first step to realize Mn3X films for antiferromagnetic spintronics applications.H2020-MSCA-ITN-2014 SELECTA (grant agreement no. 642642 of the European Commission)

Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments these structures emit visible light which is optically polarised up to 86% at 10K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2nm to 8nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarised along the length of these nanostructures

Cryogenic Design of a PrFeB Based Undulator

A PrFeB based cryogenic undulator has been built at Helmholtz Zentrum Berlin HZB in collaboration with the Ludwig Maximilian University München LMU . LMU will operate the undulator at a laser plasma accelerator at the Max Planck Institut für Quantenoptik in Garching. The 20 period device has a period length of 9mm and a fixed gap of 2.5mm. The operation of a small gap device at a high emittance electron beam requires stable magnetic material. A high coercivity is achieved with PrFeB material cooled down to 20 30K. In this paper we present the mechanic, magnetic and cryogenic design and compare predictions with measured dat